Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An...
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive ...
Andreas Mandelis Constantinos Christofides Costantinos Christofides
Research and development of solid state gas sensor devices began in the 1950s with several uncoordinated independent efforts. The number and pace of these investigations later accelerated in response to increasing pressure placed on the environment and public health by industrial activities. Since 1970, several thousand articles have been written on the subject, and laboratories around the globe have introduced novel methodologies and devices to address needs associated with particular technological developments. Despite the rapid development of this important new technology, very little...
Research and development of solid state gas sensor devices began in the 1950s with several uncoordinated independent efforts. The number and pace o...